InventorsAssigneeUS Classes216/2, ETCHING OF SEMICONDUCTOR MATERIAL TO PRODUCE AN ARTICLE HAVING A NONELECTRICAL FUNCTION216/39, FORMING GROOVE OR HOLE IN A SUBSTRATE WHICH IS SUBSEQUENTLY FILLED OR COATED216/56ETCHING TO PRODUCE POROUS OR PERFORATED ARTICLEAttorney, Agent or FirmInternational ClassesC25F 7/00A61K 9/22 Claims1. A method of fabricating a microchip device having containment reservoirs, the method comprising: providing a substrate; forming a plurality of reservoirs in the substrate, each reservoir having an opening in a surface of the substrate; fabricating a plurality of metal reservoir caps, each of which closes off one of said openings; and sealing each of said reservoirs. 2. The method of claim 1, further comprising forming at least one electrode, which is connected to each of said reservoir caps. 3. The method of claim 1, further comprising loading chemical molecules in each of said reservoirs before said sealing of the reservoirs. 4. The method of claim 3, wherein the chemical molecules comprise a drug. 5. The method of claim 1, wherein the substrate comprises silicon and the reservoirs are formed using an etch mask and an etching process. 6. The method of claim 1, wherein the substrate comprises an upper substrate portion which is bonded to a lower substrate portion. 7. The method of claim 6, wherein the upper and lower substrate portions comprise silicon, glass, or a combination thereof. 8. The method of claim 6, wherein the bond between the upper and lower substrates comprises a molecular-scale bond. |
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