Abstract text

A power semiconductor module is presented. The power semiconductor module includes a plurality of capacitors coupled in parallel with each other. Each of the plurality of capacitors each includes a first and a second connection element. The power semiconductor module further includes a first and a second busbar. The first connection element of each of the plurality of capacitors is bonded to the first busbar, and the second connection element of each of the plurality of capacitors is bonded to the second busbar. The power semiconductor module further includes an insulating element disposed between the first busbar and the second busbar, and a pressure assembly that includes at least one pressure body and one associated counterpart pressure body. The first connection element and the second connection element of each of the plurality of capacitors is subjected to pressure and electrically bonded to the associated busbars by the pressure assembly.